Researchers at the Indian Institute of Science (IISc) have made significant advancements in the field of power electronics, focusing on enhancing the safety and reliability of next-generation devices. Their research is poised to accelerate the adoption of gallium nitride (GaN) power transistors, a technology that is essential for various applications, including electric vehicles, renewable energy systems, and massive data centers. GaN electronics are recognized for their potential to minimize energy losses and reduce the size of essential components to approximately one-third of existing designs. However, the widespread use of this technology has been hindered by difficulties related to the control of the transistor’s gate, which is responsible for switching electric current on and off.

Challenges with Current GaN Transistors

In many commercially available GaN transistors, the device activates at low voltages and can inadvertently begin to leak current at slightly elevated voltages. This behavior complicates dependable operation in high-demand settings, such as electric vehicle power systems and large computing environments. To tackle this issue, researchers from the Department of Electronic Systems Engineering at IISc conducted a comprehensive two-phase analysis to improve the functionality of these devices.

Innovative Gate Design Reduces Current Leakage

During the first phase of their study, the team developed and tested multiple gate configurations, scrutinizing how electricity traverses the transistor. Their findings revealed that the device’s performance is heavily influenced by the dynamics of a thin internal layer that manages electric charge retention and dissipation. They discovered that even minuscule leakage pathways can affect the point at which the device activates. Building on this understanding, the researchers devised a new gate design that employs metal-based layers, which effectively cut current leakage by up to 10,000 times, while simultaneously allowing the device to operate safely at higher voltages.

Materials Engineering for Enhanced Performance

In the second phase of their research, the IISc team introduced a new gate structure featuring an aluminium-titanium oxide material. This innovative design counters the accumulation of unwanted charges and enables the transistor to activate at higher, more stable voltages, similar to conventional silicon-based devices. Experts recognize that this improvement could significantly enhance the practicality of GaN technology for high-power functionalities, such as charging systems for electric vehicles, inverters for renewable energy, and power supplies for data centers.

Future Prospects for Commercialization

The IISc researchers are now exploring avenues for scaling this technology to make it commercially viable. Their goal includes forming partnerships with industry stakeholders, backed by government support, to bolster India’s position in the realm of advanced electronics manufacturing. As the field of power electronics continues to evolve, these developments could play a crucial role in shaping more efficient energy systems across various sectors.